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SUP40N10-30
Vishay Siliconix
N-Channel 100-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) () 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 37.5
FEATURES
* TrenchFET(R) Power MOSFET * 175 C Junction Temperature
Available
RoHS*
COMPLIANT
TO-220AB
D
G
GDS Top View Ordering Information: SUP40N10-30 SUP40N10-30-E3 (Lead (Pb)-free) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 125 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 20 40 23 75 35 61 107
b
Unit V
A
mJ W C
3.75 - 55 to 175
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72135 S-71662-Rev. C, 06-Aug-07 www.vishay.com 1 PCB Mountc Free Air Symbol RthJA RthJC Limit 40 62.5 1.4 C/W Unit
SUP40N10-30
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 125 C VDS = 80 V, VGS = 0 V, TJ = 175 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistancea rDS(on) VGS = 6 V, ID = 10 A VGS = 10 V, ID = 15 A, TJ = 125 C VGS = 10 V, ID = 15 A, TJ = 175 C Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Timec Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge
c c a
Symbol
Test Conditions
Min 100 2
Typ
Max
Unit
4 100 1 50 250
V nA A A
75 0.024 0.026 0.030 0.034 0.054 0.067 10 2400
gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr IRM(REC) Qrr
VDS = 15 V, ID = 15 A
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
270 90 35 60
pF
VDS = 50 V, VGS = 10 V, ID = 40 A
11 9 1.7 11 20 20 45 20
nC
VDD = 50 V, RL = 1.25 ID 40 A, VGEN = 10 V, RG = 2.5
12 30 12
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 C)b 40 75 IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/s 1.0 60 5 0.15 1.5 100 8 0.4 A V ns A C
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 72135 S-71662-Rev. C, 06-Aug-07
SUP40N10-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
75 VGS = 10 thru 6 V 60 I D - Drain Current (A) I D - Drain Current (A) 60 75
45 5V 30
45
30 TC = 125 C 15 25 C
15 4V 0 0 2 4 6 8 10
- 55 C 0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
100 TC = - 55 C r DS(on) - On-Resistance () 80 g fs - Transconductance (S) 25 C 60 0.06 0.08
Transfer Characteristics
125 C
0.04
VGS = 6 V
40
0.02
VGS = 10 V
20
0 0 15 30 45 60 75
0.00 0 15 30 45 60 75
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
3000 Ciss 20
On-Resistance vs. Drain Current
V GS - Gate-to-Source Voltage (V)
2400 C - Capacitance (pF)
16
VDS = 50 V ID = 40 A
1800
12
1200
8
600
Crss
4
Coss
0 0 20 40 60 80 100
0 0 10 20 30 40 50 60 70
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance Document Number: 72135 S-71662-Rev. C, 06-Aug-07
Gate Charge www.vishay.com 3
SUP40N10-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2.5 VGS = 10 V ID = 15 A 2.0 r DS(on) - On-Resistance (Normalized) I S - Source Current (A) 100
1.5
10
TJ = 150 C TJ = 25 C
1.0
0.5
0.0 - 50 - 25
0
25
50
75
100
125
150
175
1 0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000 Drain-Source Breakdown Voltage (V)
130 ID = 10 mA 125 120 115 110 105 100 95 - 50
100
I Dav (A)
10
IAV (A) at TA = 25 C
1 IAV (A) at TA = 150 C 0.1 0.00001 0.0001 0.001 0.01 0.1 1
- 25
0
25
50
75
100
125
150
175
tin (Sec)
TJ - Junction Temperature (C)
Avalanche Current vs. Time
Drain-Source Breakdown Voltage vs. Junction Temperature
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Document Number: 72135 S-71662-Rev. C, 06-Aug-07
SUP40N10-30
Vishay Siliconix
THERMAL RATINGS
50 1000 Limited by rDS(on) 100 I D - Drain Current (A) I D - Drain Current (A) 30 10 s 100 s 10 1 ms 10 ms 1 TC = 25 C Single Pulse DC, 100 ms
40
20
10
0 0 25 50 75 100 125 150 175
0.1 0.1
1
10
100
1000
TC - Ambient Temperature (C)
VDS - Drain-to-Source Voltage (V)
Maximum Avalanche and Drain Current vs. Case Temperature
Safe Operating Area
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4
10 -3
10 -2 Square Wave Pulse Duration (sec)
10 -1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72135.
Document Number: 72135 S-71662-Rev. C, 06-Aug-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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